公开(公告)号：US10665302B2

公开(公告)日：2020-05-26

申请号：US16297763

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bong-Soon Lim ,  Sang-Hyun Joo ,  Kee-Ho Jung

IPC: G11C16/00 ,  G11C16/16 ,  G11C16/34 ,  H01L27/11582 ,  G11C16/24 ,  G11C16/08

Abstract: An operating method of a nonvolatile memory device including a page buffer array in which a plurality of page buffers are arranged in a matrix form includes counting fail bits stored in the page buffers included in first columns determined based on an operation mode from among a plurality of columns of the page buffer array, and determining whether or not a program has passed with respect to memory cells to which the page buffer array is connected, based on a count result corresponding to a number of the fail bits and a reference count determined based on the operation mode.