公开(公告)号：US20200292591A1

公开(公告)日：2020-09-17

申请号：US16882884

申请日：2020-05-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jun-han CHOI ,  Tae-hwang KONG ,  Kwang-ho KIM ,  Sang-ho KIM ,  Se-Ki KIM ,  Jun-hyeok YANG ,  Sung-yong LEE ,  Yong-jin LEE

IPC分类号： G01R19/14 ,  G05F1/46 ,  H02J50/10 ,  H02J50/80 ,  H02J7/00

摘要： A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.