公开(公告)号：US20180218950A1

公开(公告)日：2018-08-02

申请号：US15937037

申请日：2018-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MICRO CANTORO ,  MARIA TOLEDANO LUQUE ,  YEONCHEOL HEO ,  DONG IL BAE

IPC: H01L21/8238 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, the semiconductor layer including a first semiconductor material and a second semiconductor material, patterning the semiconductor layer to form a preliminary active pattern, oxidizing at least two sidewalls of the preliminary active pattern to form an oxide layer on each of the at least two sidewalls of the preliminary active pattern, at least two upper patterns and a semiconductor pattern being formed in the preliminary active pattern when the oxide layers are formed, the semiconductor pattern being disposed between the at least two upper patterns, and removing the semiconductor pattern to form an active pattern, the active pattern including the at least two upper patterns. A concentration of the second semiconductor material in each of the at least two upper patterns is higher than a concentration of the second semiconductor material in the semiconductor pattern.