公开(公告)号：US20220165752A1

公开(公告)日：2022-05-26

申请号：US17669830

申请日：2022-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bong Yong LEE ,  Tae Hun KIM ,  Min Kyung BAE

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/11556 ,  H01L29/06 ,  H01L23/10 ,  H01L27/11526

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.