公开(公告)号：US20250048638A1

公开(公告)日：2025-02-06

申请号：US18432459

申请日：2024-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HAKSEON KIM ,  KANG-OH YUN ,  DONGJIN LEE ,  YOUNGROK KIM ,  RYOONGBIN LEE ,  JAEDUK LEE

IPC: H10B43/40 ,  G11C16/24 ,  H10B43/27

Abstract: Disclosed are a semiconductor device and an electronic system including the semiconductor device. The semiconductor device includes a semiconductor substrate including a plurality of trenches and silicon, a gate electrode positioned on the semiconductor substrate and between the trenches, and a source region and a drain region respectively positioned within the trenches. The source region and the drain region include silicon carbide (SiC) or gallium nitride (GaN), the source region and the drain region each includes a first lightly doped region and a second lightly doped region, and a whole of the first lightly doped region overlaps the second lightly doped region in a direction perpendicular to an upper surface of the semiconductor substrate.

公开(公告)号：US20240276729A1

公开(公告)日：2024-08-15

申请号：US18511597

申请日：2023-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGMIN CHOI ,  HYUNMIN KIM ,  JUNTAEK PARK ,  DONGJIN LEE ,  RYOONGBIN LEE ,  JUNHEE LIM

IPC: H10B43/40 ,  H10B43/27

CPC classification number: H10B43/40 ,  H10B43/27

Abstract: A semiconductor device includes a first substrate, a transistor disposed on the first substrate, and a first interconnection layer connected to the transistor. The first interconnection layer includes a first conductive line, a second conductive line, and a third conductive line, which are spaced apart from each other in a first direction parallel to a top surface of the first substrate. The second conductive line is disposed between the first conductive line and the third conductive line. A top surface of the second conductive line is located at a height higher than top surfaces of the first and third conductive lines with respect to the top surface of the first substrate.