公开(公告)号：US12234400B2

公开(公告)日：2025-02-25

申请号：US18098847

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun Park ,  Jaesung Lee ,  Junghun Lim ,  Jungmin Oh ,  Sangwon Bae ,  Hyosan Lee

IPC: C09K13/10 ,  C09K13/08 ,  H01L21/306 ,  H10B12/00

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.