公开(公告)号：US20220121956A1

公开(公告)日：2022-04-21

申请号：US17245173

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonsung BAE ,  Seungho GWAK ,  Kwangrak KIM ,  Seunggun BYOUN ,  Gilwoo SONG ,  Younghoon SHIN ,  Kyungwon YUN ,  Chiyoung LEE ,  Taeyong JO

IPC: G06N3/08 ,  G06N3/04 ,  G06N3/067 ,  H01L21/66

Abstract: A method of manufacturing a semiconductor device includes forming a pattern on a wafer, measuring a spectrum of the pattern on the wafer, with a spectral optical system, performing an analysis of the spectrum through a deep learning model for predicting pattern characteristics, the deep learning model being trained based on a domain knowledge, and evaluating the pattern on the wafer based on the analysis of the spectrum, wherein the domain knowledge includes a noise inducing factor of the spectral optical system.