公开(公告)号：US10114562B2

公开(公告)日：2018-10-30

申请号：US14488037

申请日：2014-09-16

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Narendhiran Chinnaanangur Ravimohan ,  Muralitharan Jayaraman ,  Abhijeet Manohar ,  Alan Bennett

IPC: G06F3/06 ,  G06F12/0804 ,  G06F12/0866 ,  G06F12/02

Abstract: In a multi-plane non-volatile memory, good blocks of different planes are linked for parallel operation for storing long host writes. Where bad blocks in one or more planes result in unlinked blocks, the unlinked blocks are configured for individual operation to store short host writes and/or memory system management data. Unlinked blocks may be configured as Single Level Cell (SLC) blocks while linked blocks may be configured as SLC blocks or Multi Level Cell (MLC) blocks.