MEMORY OPERATION METHOD AND MEMORY DEVICE
    1.
    发明公开

    公开(公告)号:US20240134538A1

    公开(公告)日:2024-04-25

    申请号:US18330349

    申请日:2023-06-05

    CPC classification number: G06F3/0619 G06F3/064 G06F3/0653 G06F3/0679

    Abstract: A memory operation method, comprising: when a first super block of a memory device is a open block (or in programming state), obtaining a first read count of one of a plurality of first memory blocks in the first super block, wherein the first read count is a number of times that data of one of the first memory blocks is read out; determining whether the first read count is larger than a first threshold; and when the first read count is larger than the first threshold, moving a part of the data in the first super block to a safe area in the memory device, wherein the part of the data comprises data in the first memory block.

    MEMORY OPERATION METHOD AND MEMORY DEVICE
    2.
    发明公开

    公开(公告)号:US20240231640A9

    公开(公告)日:2024-07-11

    申请号:US18330349

    申请日:2023-06-06

    CPC classification number: G06F3/0619 G06F3/064 G06F3/0653 G06F3/0679

    Abstract: A memory operation method, comprising: when a first super block of a memory device is a open block (or in programming state), obtaining a first read count of one of a plurality of first memory blocks in the first super block, wherein the first read count is a number of times that data of one of the first memory blocks is read out; determining whether the first read count is larger than a first threshold; and when the first read count is larger than the first threshold, moving a part of the data in the first super block to a safe area in the memory device, wherein the part of the data comprises data in the first memory block.

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