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公开(公告)号:US20220037218A1
公开(公告)日:2022-02-03
申请号:US17444233
申请日:2021-08-02
Applicant: SITRONIX TECHNOLOGY CORP.
Inventor: KUO-WEI TSENG , PO-CHI CHEN
Abstract: The present invention provides a test pad structure of chip, which comprises a plurality of first internal test pads, a plurality of second internal test pads, a plurality of first extended test pads, and a plurality of second extended test pads. The first internal test pads and the second internal test pads are disposed in a chip. The second internal test pads and the first internal test pads are spaced by a distance. The first extended test pads are connected with the first internal test pads. The second extended test pads are connected with the second internal test pads. The first extended test pads and the second extended test pads may increase the contact area to be contacted by probes. Signals or power are transmitted to the first internal test pads and the second internal test pads via the first extended test pads and the second extended test pads for the probes to test the chip.
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公开(公告)号:US20220037275A1
公开(公告)日:2022-02-03
申请号:US17444229
申请日:2021-08-02
Applicant: SITRONIX TECHNOLOGY CORP.
Inventor: KUO-WEI TSENG , PO-CHI CHEN
IPC: H01L23/00
Abstract: The present invention provides a flow guiding structure of chip, which comprises at least one flow guiding member disposed on a surface of a chip and adjacent to a plurality of connecting bumps disposed on the surface of the chip. When the chip is disposed on a board member, the at least one flow guiding member may guide the conductive medium on the surface of the chip to flow toward the connecting bumps and drive a plurality of conductive particles of the conductive medium to move toward the connecting bumps and thus increasing the number of the conductive particles on the surfaces of the connecting bumps. Alternatively, the flow guiding member may retard the flow of the conductive medium for avoiding the conductive particles from leaving the surfaces of the connecting bumps and thus preventing reduction of the number of the conductive particles on the surfaces of the connecting bumps.
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