CASCODE BIAS OF POWER MOS TRANSISTORS
    1.
    发明申请
    CASCODE BIAS OF POWER MOS TRANSISTORS 有权
    功率MOS晶体管的实例偏置

    公开(公告)号:US20140184328A1

    公开(公告)日:2014-07-03

    申请号:US14136469

    申请日:2013-12-20

    Applicant: ST-Ericsson SA

    Abstract: There is disclosed a driver circuit for a power amplifier of class D type having a segmented architecture with at least one current branch which can be powered down in a low power mode of operation of the circuit. The branch comprising a switch with a cascode MOS transistor, the circuit further comprises a bias circuitry adapted for dynamically generating a dynamic bias control signal so as to cause the cascode MOS transistor of the switch to be ‘Off’ in the low power mode.

    Abstract translation: 公开了一种用于D类功率放大器的驱动电路,该驱动电路具有分段结构,具有至少一个电流分支,该电流分支可在该电路的低功率工作模式下掉电。 所述分支包括具有共源共栅MOS晶体管的开关,所述电路还包括偏置电路,所述偏置电路适于动态产生动态偏置控制信号,以使所述开关的共源共栅MOS晶体管处于低功率模式中的“关”。

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