公开(公告)号：US11177126B2

公开(公告)日：2021-11-16

申请号：US16684313

申请日：2019-11-14

Applicant: STC.UNM

Inventor： Morteza Monavarian ,  Daniel Feezell ,  Andrew Aragon ,  Saadat Mishkat-Ul-Masabih ,  Andrew Allerman ,  Andrew Armstrong ,  Mary Crawford

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/306

Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.