LEADLESS SEMICONDUCTOR PACKAGE WITH DE-METALLIZED POROUS STRUCTURES AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20230036201A1

    公开(公告)日:2023-02-02

    申请号:US17811804

    申请日:2022-07-11

    Abstract: A semiconductor package device having a porous copper adhesion promoter layer is provided. The porous copper adhesion promoter layer developed via de-metallization of the intermetallic compound layer grown after the thermal treatment of a thin metal layer plated on the copper base material. The highly selective de-metallization of the intermetallic compound layer ensures that the plated surfaces are not affected and does not create wire-bondability issues. The porous copper layer solves the delamination between the carrier and the epoxy molding compound by providing mechanical interlock features. Further, increasing the surface area of contact between the carrier and the epoxy molding compound improves the mechanical interlock features.

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