SOLID STATE PRESSURE SENSOR
    1.
    发明申请
    SOLID STATE PRESSURE SENSOR 有权
    固态压力传感器

    公开(公告)号:US20130269443A1

    公开(公告)日:2013-10-17

    申请号:US13859032

    申请日:2013-04-09

    CPC classification number: G01L9/0098 G01L9/0054 G01L9/04 G01L9/06 H01L29/66007

    Abstract: A solid state sensor to sense pressure includes a semiconductor substrate having a crystallographic design axis, and an odd number of identical inverter modules coupled in series to form a ring oscillator on the semiconductor substrate. Each inverter module includes a pair of structurally identical CMOS inverter stages. A logic input circuit starts oscillation of the ring oscillator and select a signal propagation path therein, either through CMOS inverter stage more affected by the induced mechanical stress or through CMOS inverter stages less affected by the pressure, using two logic command signals. The ring oscillator allows a reading of a frequency of oscillation based on the two logic command signals.

    Abstract translation: 用于感测压力的固态传感器包括具有晶体设计轴的半导体衬底和串联耦合以在半导体衬底上形成环形振荡器的奇数个相同的反相器模块。 每个逆变器模块包括一对结构相同的CMOS反相器级。 逻辑输入电路开始环形振荡器的振荡,并选择其中的信号传播路径,无论是通过受到机械应力影响较大的CMOS反相器级,或者通过两个逻辑指令信号,受到压力影响较小的CMOS反相器级。 环形振荡器允许基于两个逻辑命令信号读取振荡频率。

Patent Agency Ranking