公开(公告)号：US20140191114A1

公开(公告)日：2014-07-10

申请号：US14146175

申请日：2014-01-02

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Alfio RUSSO ,  Massimo Cataldo MAZZILLO

IPC: G01S17/02

CPC classification number: G01S17/026 ,  G01J1/44 ,  G01S17/08

Abstract: A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing, an estimated distance of an object from the array upon the sensing.

Abstract translation: 接近传感器可以包括Geiger模式雪崩光电二极管阵列，每个包括阳极接触和阴极接触。 公共阴极接触件可以耦合到阵列的阴极触点，以在阵列的背面限定第一连接引线。 公共阳极集电栅极触点可以耦合到阵列的阳极触点以限定阵列的第二连接引线。 电路可以与第一和第二连接引线耦合并且被配置为感测暗电流和在黑暗条件下产生的电流尖峰的速率中的至少一个，并且产生一个输出信号，该输出信号表示对象从阵列的估计距离 感应。