公开(公告)号：US20230103191A1

公开(公告)日：2023-03-30

申请号：US17947703

申请日：2022-09-19

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ignazio BERTUGLIA ,  Ettore CHIACCHIO

IPC: H01L29/872 ,  H01L29/739 ,  H01L29/06 ,  H02M7/537 ,  H01L21/265

Abstract: A RC-IGBT with fast recovery integrated diode is proposed adopting the concept of a hybrid structure with conventional IGBT emitter trench-stop, separated from an embedded low efficiency injection anode diode. The body region of the IGBT and the anode region of the diode are separately patterned and doped, and the metal barrier layer is removed from the diode area allowing a direct ohmic contact of AlSi alloy on the underneath P-doped anode. A full-anode contact opening is present in the diode area. Moreover, corresponding dummy trenches in the diode area are short-circuited to the emitter electrode giving the benefit to reduce the transfer Miller capacitance. In this way, a good trade-off of VF vs Err can be obtained for the integrated diode without downgrading the IGBT performances both in terms of VCEsat and leakage, differently from the case of devices manufactured by lifetime control techniques.

公开(公告)号：US20230223458A1

公开(公告)日：2023-07-13

申请号：US18150118

申请日：2023-01-04

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ettore CHIACCHIO ,  Ignazio BERTUGLIA

IPC: H01L29/47 ,  H01L29/06 ,  H01L29/872 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L29/47 ,  H01L29/0623 ,  H01L29/872 ,  H01L21/28537 ,  H01L29/66143

Abstract: The present disclosure is directed to a diode with a semiconductor body of silicon including a cathode region, which has a first conductivity type and is delimited by a front surface; and an anode region, which has a second conductivity type and extends into the cathode region from the front surface. The diode further includes a barrier region of cobalt disilicide, arranged on the anode region; and a metallization region of aluminum or of an aluminum alloy, arranged on the barrier region. The barrier region contacts the anode region.