公开(公告)号：US12080631B2

公开(公告)日：2024-09-03

申请号：US17463140

申请日：2021-08-31

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Luca Grandi

IPC: H01L23/485 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/485 ,  H01L21/561 ,  H01L23/3107

Abstract: The present disclosure is directed to a semiconductor package including a first laser direct structuring (LDS) resin layer and a second LDS resin layer on the first LDS resin layer. Respective surfaces of the first LDS resin layer and the second LDS resin layer are patterned utilizing an LDS process by exposing the respective surfaces to a laser. Patterning the first and second LDS resin layers, respectively, activates additive material present within the first and second LDS resin layers, respectively, converting the additive material from a non-conductive state to a conductive state. The LDS process is followed by a chemical plating step and an electrolytic plating process to form conductive structure coupled to a plurality of die within the first and second LDS resin layers. A molding compound layer is formed on surfaces of the conductive structures and covers the surfaces of the conductive structures. After these steps have been completed, the first LDS resin layer and the second LDS resin layer are singulated along channels filled with conductive material.