公开(公告)号：US09658158B2

公开(公告)日：2017-05-23

申请号：US13902468

申请日：2013-05-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Lucio Renna ,  Clelia Carmen Galati ,  Natalia Maria Rita Spinella ,  Piero Giorgio Fallica

IPC: G01N33/551 ,  G01N21/64

CPC classification number: G01N21/6428 ,  G01N21/6454 ,  G01N33/551

Abstract: A diagnostic device includes a photodiode formed by a body of semiconductor material having a first surface, an integrated optical structure on the first surface and having a second surface, and at least one detection region on the second surface. The at least one detection region includes at least one receptor that binds to a corresponding target molecule that can be mated with a corresponding marker, which, when excited by radiation having a first wavelength, emits radiation having a second wavelength that can be detected by the photodiode. The integrated optical structure includes at least a first layer of a first material having a first refractive index. The first layer has a thickness substantially equal to an integer and odd multiple of one fourth of the first wavelength divided by the first refractive index.

公开(公告)号：US09209336B2

公开(公告)日：2015-12-08

申请号：US14281529

申请日：2014-05-19

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Delfo Nunziato Sanfilippo ,  Piero Giorgio Fallica

IPC: H01L29/49 ,  H01L31/107 ,  H01L27/146 ,  H01L25/16

CPC classification number: H01L31/107 ,  H01L25/167 ,  H01L27/14629 ,  H01L27/14643 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.

Abstract translation: Geiger型雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型并且容纳阳极区，第二导电类型面向主体的顶表面，阴极 接触区域，其具有第一导电类型和比主体更高的掺杂水平，面向主体的底表面;绝缘区域，其延伸穿过主体并将活动区域与身体的其余部分隔离;活动区域容纳 阳极区域和阴极接触区域。 绝缘区域由多晶硅的第一反射镜区域，金属材料的第二反射镜区域和电介质材料的通道停止区域形成，围绕第一和第二反射镜区域。