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1.发明授权Bidirectional semiconductor device for protection against electrostatic discharges, usable on silicon on insulator 有权用于防止静电放电的双向半导体器件，可用于绝缘体上硅公开(公告)号：US09035349B2
公开(公告)日：2015-05-19
申请号：US13768730
申请日：2013-02-15
Applicant: STMicroelectronics SA
Inventor： Philippe Galy , Nicolas Guitard , Thomas Benoist
CPC classification number: H01L29/7424 , H01L27/0262 , H01L29/87
Abstract: A device includes, within a layer of silicon on insulator, a central semiconductor zone including a central region having a first type of conductivity, two intermediate regions having a second type of conductivity opposite to that of the first one, respectively disposed on either side of and in contact with the central region in order to form two PN junctions, two semiconductor end zones respectively disposed on either side of the central zone, each end zone comprising two end regions of opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
Abstract translation: 一种器件包括在绝缘体上的硅层内的包括具有第一类型导电性的中心区域的中心半导体区域，具有与第一类型导电性相反的第二类型导电率的第二类型的中间区域分别设置在 并且与中心区域接触以形成两个PN结，两个半导体端部区域分别设置在中心区域的任一侧上，每个端部区域包括与相邻中间区域接触的相反导电类型的两个端部区域， 每个端部区域的两个端部区域相互电连接以形成装置的两个端子。
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2.发明申请Bidirectional Semiconductor Device for Protection Against Electrostatic Discharges, Usable on Silicon on Insulator 有权用于防止静电放电的双向半导体器件，可用于绝缘体上的硅公开(公告)号：US20130214326A1
公开(公告)日：2013-08-22
申请号：US13768730
申请日：2013-02-15
Applicant: STMICROELECTRONICS SA
Inventor： Philippe Galy , Nicolas Guitard , Thomas Benoist
IPC: H01L29/74
CPC classification number: H01L29/7424 , H01L27/0262 , H01L29/87
Abstract: A device includes, within a layer of silicon on insulator, a central semiconductor zone including a central region having a first type of conductivity, two intermediate regions having a second type of conductivity opposite to that of the first one, respectively disposed on either side of and in contact with the central region in order to form two PN junctions, two semiconductor end zones respectively disposed on either side of the central zone, each end zone comprising two end regions of opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
Abstract translation: 一种器件包括在绝缘体上的硅层内的包括具有第一类型导电性的中心区域的中心半导体区域，具有与第一类型导电性相反的第二类型导电率的第二类型的中间区域分别设置在 并且与中心区域接触以形成两个PN结，两个半导体端部区域分别设置在中心区域的任一侧上，每个端部区域包括与相邻中间区域接触的相反导电类型的两个端部区域， 每个端部区域的两个端部区域相互电连接以形成装置的两个端子。
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