公开(公告)号：US20220360236A1

公开(公告)日：2022-11-10

申请号：US17662542

申请日：2022-05-09

Applicant: STMICROELECTRONICS SA

Inventor： Samia Ouyahia ,  Renaud Lemoine ,  Eric Wilhelm

IPC: H03F3/213 ,  H01L27/06 ,  H03F3/45 ,  H03F1/02

Abstract: According to an embodiment, An integrated circuit comprising a first cascode radio frequency (RF) power amplifier that includes a first common source transistor having a gate configured to receive a first RF signal, and a source connected to a neutral point; a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor; and a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.