公开(公告)号：US20020086461A1

公开(公告)日：2002-07-04

申请号：US10017275

申请日：2001-12-13

Applicant: STMicroelectronics, Inc.

Inventor： Tsiu C. Chan

IPC: H01L021/82

CPC classification number: H01L21/76 ,  H01L21/761 ,  H01L21/765 ,  H01L27/11807

Abstract: A radiation hardened memory device having static random access memory cells includes active gate isolation structures to prevent leakage currents between active regions formed adjacent to each other on a substrate. The active gate isolation structure includes a gate oxide and polycrystalline silicon gate layer electrically coupled to a voltage terminal resulting in an active gate isolation structure that prevents a conductive channel extending from adjacent active regions from forming. The gate oxide of the active gate isolation structures is relatively thin compared to the conventional oxide isolation regions and thus, will be less susceptible to any adverse influence from trapped charges caused by radiation exposure.

Abstract translation: 具有静态随机存取存储器单元的辐射硬化存储器件包括有源栅极隔离结构，以防止在衬底上彼此相邻形成的有源区之间的漏电流。 有源栅极隔离结构包括电耦合到电压端的栅极氧化物和多晶硅栅极层，导致有源栅极隔离结构，其防止从相邻有源区延伸的导电沟道形成。 与常规的氧化物隔离区域相比，有源栅极隔离结构的栅极氧化物相对较薄，因此不太容易受到由辐射暴露引起的俘获电荷的任何不利影响。