公开(公告)号：US20020130334A1

公开(公告)日：2002-09-19

申请号：US10036088

申请日：2001-12-28

Applicant: STMicroelectronics, S.r.I.

Inventor： Roberto Gastaldi ,  Gianbattsista Lo Giudice ,  Marco Pasotti ,  Federico Pio

IPC: H01L031/072

CPC classification number: G11C16/102

Abstract: An electrically-modifiable, non-volatile, semiconductor memory comprising a plurality of user memory locations which can be addressed individually from outside the memory in order to read and to modify the data held therein is characterized in that, for each user memory location, there is a corresponding pair of physical memory locations in the memory, which assume, alternatively, the functions of an active memory location and of a non-active memory location, the active memory location containing a previously-written datum and the non-active memory location being available for the writing of a new datum to replace the previously-written datum, so that, upon a request to replace the previous datum with the new datum, the previous datum is kept in the memory until the new datum has been written.

Abstract translation: 一种可电气修改的非易失性半导体存储器，其包括多个用户存储器位置，其可以从存储器外部单独寻址以便读取和修改其中保存的数据，其特征在于，对于每个用户存储器位置， 存储器中的对应物理存储器位置对，其替代地假设有效存储器位置和非活动存储器位置的功能，所述活动存储器位置包含预先写入的数据和非活动存储器位置 可用于写入新的数据以替换以前写入的数据，以便在要求使用新数据替换以前的数据时，先前的数据保存在存储器中，直到新的数据被写入。