BACKSIDE ILLUMINATION IMAGE SENSOR AND MANUFACTURING METHOD

    公开(公告)号:US20220406829A1

    公开(公告)日:2022-12-22

    申请号:US17840437

    申请日:2022-06-14

    Inventor: Maurin DOUIX

    Abstract: An integrated sensor includes a substrate made of a first semiconductor material having a first optical refractive index. The substrate includes a pixel array, wherein each pixel has a photosensitive active zone formed by an index contrast zone including a matrix of the first semiconductor material and a periodic structure embedded in the matrix. The periodic structure extends from the backside of the substrate and has a two-dimensional periodicity in a parallel plane with the backside. A value of the periodicity is linked with the wavelength of the optical signal and with the first refractive index. Elements of the periodic structure are formed of a second optically transparent material having a second refractive index less than the first refractive index. These elements are positioned at locations defined by the periodicity except for at one location defining a region, preferably central, that is devoid of a corresponding one of the elements.

    INTEGRATED ELECTRO-OPTIC MODULATOR
    2.
    发明申请
    INTEGRATED ELECTRO-OPTIC MODULATOR 有权
    集成电光调制器

    公开(公告)号:US20170075148A1

    公开(公告)日:2017-03-16

    申请号:US15084645

    申请日:2016-03-30

    CPC classification number: G02F1/025 G02F2001/0151

    Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

    Abstract translation: E / O相位调制器可以包括具有绝缘衬底,单晶硅条和相同厚度的多晶硅条的波导,并且在绝缘衬底之上掺杂相反导电类型,并且在单晶之间的绝缘界面层 硅带和多晶硅条。 单晶硅带和多晶硅条中的每一个可以通过相应的延伸部横向连续,并且相应的电触点耦合到每个延伸部。

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