公开(公告)号：US10359652B2

公开(公告)日：2019-07-23

申请号：US15868642

申请日：2018-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Maurin Douix ,  Frederic Boeuf ,  Sébastien Cremer

IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

公开(公告)号：US20180136496A1

公开(公告)日：2018-05-17

申请号：US15868642

申请日：2018-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Maurin Douix ,  Frederic Boeuf ,  Sébastien Cremer

IPC: G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F2001/0151

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

公开(公告)号：US09891450B2

公开(公告)日：2018-02-13

申请号：US15084645

申请日：2016-03-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles Baudot ,  Maurin Douix ,  Frédéric Boeuf ,  Sébastien Cremer

IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F2001/0151

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.