公开(公告)号：US10903423B2

公开(公告)日：2021-01-26

申请号：US16708604

申请日：2019-12-10

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Pierre Morin ,  Michel Haond ,  Paola Zuliani

IPC: H01L45/00 ,  H01L27/24

Abstract: A phase change memory includes an L-shaped resistive element having a first part that extends between a layer of phase change material and an upper end of a conductive via and a second part that rests at least partially on the upper end of the conductive via and may further extend beyond a peripheral edge of the conductive via. The upper part of the conductive via is surrounded by an insulating material that is not likely to adversely react with the metal material of the resistive element.

公开(公告)号：US10510955B2

公开(公告)日：2019-12-17

申请号：US15953921

申请日：2018-04-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Pierre Morin ,  Michel Haond ,  Paola Zuliani

IPC: H01L45/00 ,  H01L27/24

Abstract: A phase change memory includes an L-shaped resistive element having a first part that extends between a layer of phase change material and an upper end of a conductive via and a second part that rests at least partially on the upper end of the conductive via and may further extend beyond a peripheral edge of the conductive via. The upper part of the conductive via is surrounded by an insulating material that is not likely to adversely react with the metal material of the resistive element.