公开(公告)号：US12243937B2

公开(公告)日：2025-03-04

申请号：US17711597

申请日：2022-04-01

Applicant: STMicroelectronics France ,  STMicroelectronics International N.V.

Inventor： Matthieu Nongaillard ,  Thomas Oheix

IPC: H01L29/778 ,  H01L27/12 ,  H01L29/20 ,  H01L29/205 ,  H01L29/872

Abstract: The disclosure concerns a device which comprises a stack of two high electron mobility transistors, referred to as first and second transistor, separated by an insulating layer and each provided with a stack of semiconductor layers respectively referred to as first stack and second stack, the first and the second stack each comprising, from the insulating layer to, respectively, a first and a second surface, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first set of electrodes and a second set of electrodes, the first and the second set of electrodes each comprising a source electrode, a drain electrode, and a gate electrode which are arranged so that the first and the second transistor are electrically connected head-to-tail.

公开(公告)号：US12249644B2

公开(公告)日：2025-03-11

申请号：US17058117

申请日：2019-05-07

Applicant: STMicroelectronics International N.V.

Inventor： Matthieu Nongaillard ,  Thomas Oheix

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/20

Abstract: An enhancement-mode high-electron-mobility transistor comprises a structure including a stack made of III-V semiconductor materials defining an interface and capable of forming a conduction layer in the form of a two-dimensional electron gas layer; a source electrode and a drain electrode forming an electrical contact with the conduction layer; and a gate electrode arranged on top of the structure, between the source electrode and the drain electrode. The structure comprises a bar that is arranged below the gate electrode and passes through the interface of the stack. The bar comprises two semiconductor portions exhibiting opposite types of doping, defining a p-n junction in proximity to the interface.