公开(公告)号：US20030227787A1

公开(公告)日：2003-12-11

申请号：US10163848

申请日：2002-06-05

Applicant: STMicroelectronics Inc.

Inventor： Mark A. Lysinger ,  Christophe Frey ,  Frederic LaLanne

IPC: G11C015/00

CPC classification number: G11C15/04

Abstract: A Content Addressable Memory (CAM) cell is disclosed having an physical implementation of transistors for improving the semiconductor substrate area utilization of the CAM cell and the CAM array. The CAM cell comprises a first and second memory circuit and a compare circuit. The compare circuit of six transistors formed over two active regions. The local interconnect between the compare circuit and the first memory circuit formed of a polysilicon region. The local interconnect between the compare circuit and the second memory circuit formed of polysilicon and conductive regions.

Abstract translation: 公开了具有用于改善CAM单元和CAM阵列的半导体衬底区域利用率的晶体管的物理实现的内容寻址存储器（CAM）单元。 CAM单元包括第一和第二存储器电路和比较电路。 六个晶体管的比较电路形成在两个有源区域上。 比较电路和由多晶硅区域形成的第一存储器电路之间的局部互连。 比较电路和由多晶硅和导电区域形成的第二存储器电路之间的局部互连。