公开(公告)号：US20240389484A1

公开(公告)日：2024-11-21

申请号：US18659436

申请日：2024-05-09

Applicant: STMicroelectronics International N.V.

Inventor： Massimo BORGHI ,  Annalisa GILARDINI ,  Elisabetta PALUMBO ,  Carlo Luigi PRELINI ,  Paola ZULIANI

IPC: H10N70/00 ,  C22C28/00 ,  H10B63/10 ,  H10N70/20

Abstract: A phase change memory element includes a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and is made of a GST alloy. An average percentage of germanium in the GST alloy is higher than 50%. The memory region has a storage portion formed by a GST alloy that includes nitrogen in an electrically relevant amount. The GST alloy of the storage portion has a percentage of germanium inclusively between 60% and 68%; a percentage of antimony inclusively between 9% and 5%; a percentage of tellurium inclusively between 18% and 10%; and a percentage of nitrogen inclusively between 5% and 25%.