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公开(公告)号：US20250107230A1
公开(公告)日：2025-03-27
申请号：US18473861
申请日：2023-09-25
Applicant: STMicroelectronics International N.V.
Inventor： Franck JULIEN
Abstract: A transistor device comprising a silicon-on-insulator (SOI) substrate having a plurality of polysilicon gates including a plurality of recessed gates and a plurality of non-recessed gates. The plurality of recessed gates being recessed in a top silicon layer of the SOI substrate and the plurality of non-recessed gates being on the top silicon layer. The plurality of recessed gates comprising an upper cap portion on a bottom buried portion that is in a recess of the SOI substrate. Methods of manufacturing the device are provided.
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