公开(公告)号：US20240405115A1

公开(公告)日：2024-12-05

申请号：US18671584

申请日：2024-05-22

Applicant: STMicroelectronics International N.V.

Inventor： Maria Eloisa CASTAGNA ,  Giovanni GIORGINO ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Aurore CONSTANT

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

Abstract: A HEMT device including: a semiconductor body forming a heterostructure; a gate region on the semiconductor body and elongated along a first axis; a gate metal region including a lower portion on the gate region and recessed with respect to the gate region, and a upper portion on the lower portion and having a width greater that the lower portion along a second axis; a source metal region extending on the semiconductor body and made in part of aluminum; a drain metal region on the semiconductor body, the source metal region and the drain metal region on opposite sides of the gate region; a first conductivity enhancement region of aluminum nitride, extending on the semiconductor body and interposed between the source metal region and the gate region, the first conductivity enhancement region being in direct contact with the source metal region and being separated from the gate region.