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公开(公告)号：US20250105227A1
公开(公告)日：2025-03-27
申请号：US18890617
申请日：2024-09-19
Applicant: STMicroelectronics International N.V.
Inventor： Jonathan GODILLON
Abstract: An electronic circuit includes a first die, having a GaN transistor, and a second die, stacked so that an element of the second die electrically connects a first node and a second nodes of the first die respectively coupled to a conduction node and to a control node of the GaN transistor.
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