公开(公告)号：US20240404945A1

公开(公告)日：2024-12-05

申请号：US18670500

申请日：2024-05-21

Applicant: STMicroelectronics International N.V.

Inventor： Antonio Filippo Massimo PIZZARDI ,  Santo Alessandro SMERZI ,  Ferdinando IUCOLANO

IPC: H01L23/528 ,  H01L21/768 ,  H01L29/66 ,  H01L29/778

Abstract: A heterojunction power device includes: a substrate containing semiconductor material; a first active area and a second active area, arranged on the substrate symmetrically opposite with respect to an axis of symmetry and accommodating respective heterostructures; a separation region, extending along the axis of symmetry between the first active area and the second active area. The power device further includes: a first conductive bus configured to distribute a first electric potential of the power device in parallel to the first and the second active areas; a second conductive bus configured to distribute a second electric potential of the power device, different from the first electric potential, in parallel to the first and the second active areas. The first and the second conductive buses extend along the axis of symmetry above the separation region and the second conductive bus overlies the first conductive bus.