Electrically modifiable, non-volatile, semiconductor memory which can keep a datum stored until an operation to modify the datum is completed
    1.
    发明申请
    Electrically modifiable, non-volatile, semiconductor memory which can keep a datum stored until an operation to modify the datum is completed 失效
    完成可修改基准的操作之前可以保存数据的电可修改的非易失性半导体存储器

    公开(公告)号:US20020130334A1

    公开(公告)日:2002-09-19

    申请号:US10036088

    申请日:2001-12-28

    CPC classification number: G11C16/102

    Abstract: An electrically-modifiable, non-volatile, semiconductor memory comprising a plurality of user memory locations which can be addressed individually from outside the memory in order to read and to modify the data held therein is characterized in that, for each user memory location, there is a corresponding pair of physical memory locations in the memory, which assume, alternatively, the functions of an active memory location and of a non-active memory location, the active memory location containing a previously-written datum and the non-active memory location being available for the writing of a new datum to replace the previously-written datum, so that, upon a request to replace the previous datum with the new datum, the previous datum is kept in the memory until the new datum has been written.

    Abstract translation: 一种可电气修改的非易失性半导体存储器,其包括多个用户存储器位置,其可以从存储器外部单独寻址以便读取和修改其中保存的数据,其特征在于,对于每个用户存储器位置, 存储器中的对应物理存储器位置对,其替代地假设有效存储器位置和非活动存储器位置的功能,所述活动存储器位置包含预先写入的数据和非活动存储器位置 可用于写入新的数据以替换以前写入的数据,以便在要求使用新数据替换以前的数据时,先前的数据保存在存储器中,直到新的数据被写入。

    Logic partitioning of a nonvolatile memory array
    2.
    发明申请
    Logic partitioning of a nonvolatile memory array 有权
    非易失性存储器阵列的逻辑分区

    公开(公告)号:US20010036115A1

    公开(公告)日:2001-11-01

    申请号:US09817804

    申请日:2001-03-26

    CPC classification number: G06F12/0246 G06F2212/7203 G06F2212/7211

    Abstract: A FLASH memory is organized in a plurality of physical sectors which may be split into a plurality of singularly addressable logic sectors. Each logic sector may include a memory space of a predetermined size and a chain pointer assuming a neutral value or a value pointing to a second logic sector associated with a respective chain pointer at the neutral value. Each logic sector may also include a status indicator assuming at least one of a first value if the logic sector is empty, a second value if the data therein belongs to the logic sector, a third value if the data does not belong to the logic sector, and a fourth value if the data has been erased. Further, each logic sector may include a remap pointer assuming the neutral value or a value pointing directly or indirectly to the chain pointer of a third logic sector.

    Abstract translation: 闪存存储器被组织在多个物理扇区中,这些物理扇区可被分成多个可单独寻址的逻辑扇区。 每个逻辑扇区可以包括预定大小的存储器空间和假定中性值的链指针或指向与中性值处的相应链指针相关联的第二逻辑扇区的值。 如果逻辑扇区为空,则每个逻辑扇区还可以包括状态指示符,如果其中的数据属于逻辑扇区,则假设第二值为第一值;如果数据不属于逻辑扇区,则第三值 ,如果数据已被擦除,则为第四个值。 此外,每个逻辑扇区可以包括假定中性值的重映射指针或直接或间接指向第三逻辑扇区的链指针的值。

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