公开(公告)号：US20010036115A1

公开(公告)日：2001-11-01

申请号：US09817804

申请日：2001-03-26

Applicant: STMicroelectronics S.r.I.

Inventor： Alessandro Rocchi ,  Marco Bisio ,  Marco Pasotti ,  Pier Luigi Rolandi

IPC: G11C007/00

CPC classification number: G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7211

Abstract: A FLASH memory is organized in a plurality of physical sectors which may be split into a plurality of singularly addressable logic sectors. Each logic sector may include a memory space of a predetermined size and a chain pointer assuming a neutral value or a value pointing to a second logic sector associated with a respective chain pointer at the neutral value. Each logic sector may also include a status indicator assuming at least one of a first value if the logic sector is empty, a second value if the data therein belongs to the logic sector, a third value if the data does not belong to the logic sector, and a fourth value if the data has been erased. Further, each logic sector may include a remap pointer assuming the neutral value or a value pointing directly or indirectly to the chain pointer of a third logic sector.

Abstract translation: 闪存存储器被组织在多个物理扇区中，这些物理扇区可被分成多个可单独寻址的逻辑扇区。 每个逻辑扇区可以包括预定大小的存储器空间和假定中性值的链指针或指向与中性值处的相应链指针相关联的第二逻辑扇区的值。 如果逻辑扇区为空，则每个逻辑扇区还可以包括状态指示符，如果其中的数据属于逻辑扇区，则假设第二值为第一值;如果数据不属于逻辑扇区，则第三值 ，如果数据已被擦除，则为第四个值。 此外，每个逻辑扇区可以包括假定中性值的重映射指针或直接或间接指向第三逻辑扇区的链指针的值。