公开(公告)号：US20210242323A1

公开(公告)日：2021-08-05

申请号：US17161059

申请日：2021-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： Davide Giuseppe PATTI ,  Mario Giovanni SCURATI ,  Marco MORELLI

IPC: H01L29/45 ,  H01L29/78 ,  H01L29/10 ,  H01L21/285 ,  H01L29/66

Abstract: A vertical conduction electronic power device includes a body delimited by a first and a second surface and having an epitaxial layer of semiconductor material, and a substrate. The epitaxial layer is delimited by the first surface of the body and the substrate is delimited by the second surface of the body. The epitaxial layer houses at least a first and a second conduction region having a first type of doping and a plurality of insulated-gate regions, which extend within the epitaxial layer. The substrate has at least one silicide region, which extends starting from the second surface of the body towards the epitaxial layer.