公开(公告)号：US20200098743A1

公开(公告)日：2020-03-26

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87 ,  H01L27/102 ,  H01L27/12

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US10515946B2

公开(公告)日：2019-12-24

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US20180269199A1

公开(公告)日：2018-09-20

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/102 ,  H01L27/12 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US11444077B2

公开(公告)日：2022-09-13

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H02H9/04 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.