公开(公告)号：US20250160116A1

公开(公告)日：2025-05-15

申请号：US19027593

申请日：2025-01-17

Applicant: Samsung Display Co., Ltd.

Inventor： Wonho JANG ,  Sun PARK ,  Donghyun WON

IPC: H10K50/844 ,  H10K59/122

Abstract: A display apparatus includes a substrate including a display area and a peripheral area, a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, a first inorganic insulating layer located on the substrate and under the gate electrode and covering the semiconductor layer, a second inorganic insulating layer located on the first inorganic insulating layer and covering the gate electrode, a third inorganic insulating layer located on the second inorganic insulating layer and including a 1-3th opening in the peripheral area, an organic insulating layer located on the third inorganic insulating layer, covering the source electrode and the drain electrode, and including a second opening overlapping the 1-3th opening in the peripheral area, and a pattern portion located on a layer under the organic insulating layer and overlapping the 1-3th opening and the second opening.

公开(公告)号：US20230005964A1

公开(公告)日：2023-01-05

申请号：US17856493

申请日：2022-07-01

Applicant: Samsung Display Co., LTD.

Inventor： Yongduck SON ,  Jeong Hwan KIM ,  Taehui KIM ,  Junhwi PARK ,  Dabin LEE ,  Yujin LEE ,  Wonho JANG

IPC: H01L27/12

Abstract: A display device includes a first light blocking layer disposed on a substrate, a second light blocking layer disposed on the substrate and spaced apart from the first light blocking layer, an active layer including a first area disposed on the first light blocking layer, a second area disposed on the substrate between the first light blocking layer and the second light blocking layer, and a third area disposed between the first area and the second area, a gate electrode disposed on the active layer and overlapping a portion of the first area, a first electrode disposed on the gate electrode, and including at least a portion overlapping the first light blocking layer, and a second electrode disposed on the gate electrode, and including at least a portion overlapping the second light blocking layer and at least another portion overlapping the third area of the active layer.