公开(公告)号：US20230085734A1

公开(公告)日：2023-03-23

申请号：US17728275

申请日：2022-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunjae KIM ,  Chungho SONG ,  Yonghoe CHO

IPC: H01L27/146 ,  H01L23/00

Abstract: An image sensor package includes: a package base substrate having a cavity extending inwards from an upper surface thereof, and including a plurality of upper surface connection pads and a plurality of lower surface connection pads; an image sensor chip in the cavity, and including a chip body having a first surface and a second surface facing each other, a sensor unit located in the first surface of the chip body, and a plurality of chip pads around the sensor unit; a filter glass above the image sensor chip, and including a transparent substrate and a plurality of redistribution patterns on a lower surface of the transparent substrate; and a plurality of connection terminals between the plurality of redistribution patterns and the plurality of chip pads and between the plurality of redistribution patterns and the plurality of upper surface connection pads.

公开(公告)号：US20240395842A1

公开(公告)日：2024-11-28

申请号：US18406918

申请日：2024-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesang YOO ,  Seungjoon LEE ,  Jeongki KIM ,  Chungho SONG ,  Minwook JUNG

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate including pixels, a first surface, and a second surface opposite to the first surface. A trench isolation layer is provided in a trench penetrating the first surface and the second surface of the semiconductor substrate, and separating the pixels from each other. A micro lens is disposed on the second surface, wherein the trench isolation layer includes: a first conductive isolation layer extending from the first surface to the second surface. An insulation liner is disposed between the first conductive isolation layer and the semiconductor substrate. A second conductive isolation layer extends from the second surface to the first surface, the second conductive isolation layer being in contact with the first conductive isolation layer.