公开(公告)号：US20240241648A1

公开(公告)日：2024-07-18

申请号：US18370564

申请日：2023-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changjun LEE ,  Dayeon KIM ,  Sangwoo KIM ,  Yongjun CHO

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: There is provided a storage device which includes a nonvolatile memory device that includes a first area and a second area, and a controller that receives a first command from an external host device, generates a physical address by performing first error correction decoding on a physical address entry included in the first command, reads first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device. When the first error correction decoding fails, the controller reads first map data from the first area from the nonvolatile memory device, translates a logical address included in the first command into the physical address by using the first map data, reads the first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device.