公开(公告)号：US20200219911A1

公开(公告)日：2020-07-09

申请号：US16655762

申请日：2019-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung HUR ,  Jin Gyun KIM ,  Kook Tae KIM ,  Young Bin LEE ,  Ha Jin LIM ,  Taek Soo JEON ,  Soo Jin HONG

IPC: H01L27/146

Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

公开(公告)号：US20200243608A1

公开(公告)日：2020-07-30

申请号：US16565553

申请日：2019-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taek Soo JEON ,  Kee Won KIM ,  Sang Hoon UHM ,  Ki Joong YOON ,  Ha Jin LIM

IPC: H01L27/28 ,  H01L27/30

Abstract: Image sensors with improved performance and a higher degree of integration are provided. The image sensors include a substrate including a first surface and a second surface opposite to each other, a first organic photoelectric conversion layer on the first surface of the substrate, a first penetration via connected to the first organic photoelectric conversion layer and extending through the substrate, a first floating diffusion region in the substrate adjacent to the second surface of the substrate, and a first transistor structure on the second surface of the substrate, wherein the first transistor structure includes a semiconductor layer configured to connect the first penetration via and the first floating diffusion region, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.