公开(公告)号：US20210204435A1

公开(公告)日：2021-07-01

申请号：US16754891

申请日：2018-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung Hee CHOI ,  Jin Ho LEE ,  Young Soo JANG ,  Yun Sung HA ,  Yong Wook HWANG ,  Jung Hyeon HWANG ,  Chang Youn HWANG ,  Hyeon Woo LEE ,  Chong Kun CHO

IPC: H05K5/06 ,  H05K5/04 ,  G06F1/16

Abstract: An electronic device according to an embodiment of the present invention comprises a front plate, a back plate facing a direction opposite to the front plate, a side member surrounding a space between the front plate and the back plate, constructed integrally with respect to the back plate, or bonded to the back plate, wherein the side member includes an outer structure constructed of a first metallic material and including at least one first surface constructing an outer surface of the side member and at least one second surface facing the space, an inner structure constructed of a second metallic material different from the first metallic material and including at least one third surface at least partially in contact with the second surface and at least one fourth surface facing the space, a touch screen display exposed through the front plate, an internal structure disposed to the space so as to be adjacent to the side member, constructed of a first polymer material, and including at least one fifth surface at least partially in contact with the second surface, a wireless communication circuit electrically coupled with a portion of the inner structure, and a sealant disposed between the fourth surface and at least one sixth surface of the internal structure. Other examples are also possible.

公开(公告)号：US20230039809A1

公开(公告)日：2023-02-09

申请号：US17725750

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun CHOI ,  Won Oh RYU ,  Hyeon Woo LEE ,  Gyu Hyun LIM

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/00

Abstract: An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.