公开(公告)号：US20250132253A1

公开(公告)日：2025-04-24

申请号：US18625341

申请日：2024-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin PARK ,  Hyeonkyu LEE ,  Sungsoo YIM

IPC: H01L23/528 ,  H10B12/00

Abstract: A semiconductor memory device includes a conductive line extending in a first direction, first and second channel regions connected to the conductive line, contact plugs apart from the conductive line in a vertical direction with the first and second channel regions therebetween, a back gate electrode extending in a second direction perpendicular to the first direction between the first and second channel regions, and a back gate dielectric film covering surfaces of the back gate electrode, wherein the back gate dielectric film includes a vertical extension portion arranged between the back gate electrode and each of the first and second channel regions to cover sidewalls of the back gate electrode, and a horizontal extension portion connected integrally to the vertical extension portion and covering the back gate electrode at one position selected from a first position facing the conductive line and a second position facing the contact plugs.