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公开(公告)号:US20230231009A1
公开(公告)日:2023-07-20
申请号:US17950507
申请日:2022-09-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangsoo KIM , Jinhee Cheon
CPC classification number: H01L29/0634 , H01L29/1608 , H01L29/1095 , H01L29/7813 , H01L29/66068
Abstract: A power semiconductor device includes a base semiconductor layer including impurities of a first conductivity type; a body portion provided on the base semiconductor layer and defined by a source trench, the body portion including a gate trench extending inwardly from an upper surface of the body portion; a gate electrode provided in the gate trench; a source electrode provided on the body portion and spaced apart from the gate electrode; and a drain electrode provided below the base semiconductor layer, wherein the body portion includes: a drift layer provided on the base semiconductor layer and including impurities of the first conductivity type; and a pair of shielding regions provided in the drift layer, spaced apart from each other in a horizontal direction, and spaced apart from the base semiconductor layer and the gate trench, the pair of shielding regions including impurities of a second conductivity type different from the first conductivity type.