公开(公告)号：US11264482B2

公开(公告)日：2022-03-01

申请号：US16572681

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyun Kim ,  Inhyun Song ,  Yeongmin Jeon ,  Sejin Park ,  Juyun Park ,  Jonghoon Baek ,  Taeyeon Shin ,  Sooyeon Jeong

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.