公开(公告)号：US09449973B2

公开(公告)日：2016-09-20

申请号：US14263119

申请日：2014-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-jin Lim ,  Kong-soo Lee ,  Seok-woo Nam ,  Dong-chan Kim ,  Soo-jin Hong

IPC: G11C7/10 ,  H01L27/092 ,  H01L27/06 ,  G11C11/4091 ,  G11C7/06 ,  H01L27/11

CPC classification number: H01L27/092 ,  G11C7/065 ,  G11C11/4091 ,  H01L27/0688 ,  H01L27/1108

Abstract: A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line.

Abstract translation: 半导体器件包括衬底; 第一反相器，设置在所述基板上并接收来自位线和互补位线中的任何一个的电压; 设置在所述第一反相器上的半导体层; 以及设置在半导体层上的第一和第三开关器件，并且将第一反相器的阈值电压调整到位线和互补位线中的任一个的电压电平。