公开(公告)号：US20210124508A1

公开(公告)日：2021-04-29

申请号：US16724607

申请日：2019-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Arun GEORGE ,  Anshul SHARMA ,  Rajesh KRISHNAN ,  Vishak G

IPC: G06F3/06

Abstract: A method for converting an electronic flash storage device having a byte addressable storage (ByAS) and a block addressable flash storage (BlAS) to a single byte addressable storage includes receiving, by a host, a request for memory allocation from the ByAS, the receiving being from a first application among of a plurality of applications running on a processor; deallocating, by the host, a least relevant page allocated to at least one second application among the plurality of applications; moving, by the host, a content to the BlAS at a first BlAS location, the content related to the least relevant page, the moving based on the deallocation; allocating, by the host, the least relevant page to the first application; and updating, by the host, a cache metadata and a page lookup table of the first application and the at least one second application based on the deallocation and allocation.