公开(公告)号：US20190229121A1

公开(公告)日：2019-07-25

申请号：US16374363

申请日：2019-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyoung Kim ,  Hyung Jong LEE ,  Deokhan BAE

IPC: H01L27/11 ,  H01L23/528 ,  H01L23/522

Abstract: Disclosed is a semiconductor device including a first active pattern and a second active pattern that extend in a first direction on a substrate and are spaced apart from each other in a second direction crossing the first direction, a first gate structure that extends across the first and second active patterns, a second gate structure that is spaced apart from the first gate structure, and a node contact between the first and second gate structures that electrically connects the first active pattern and the second active pattern to each other. The node contact comprises a first end adjacent to the first active pattern and a second end adjacent to the second active pattern. The second end of the node contact being shifted in the first direction relative to the first end of the node contact so as to be closer to the second gate structure than to the first gate structure.

公开(公告)号：US20180315762A1

公开(公告)日：2018-11-01

申请号：US15842056

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyoung Kim ,  Hyung Jong LEE ,  Deokhan BAE

IPC: H01L27/11 ,  H01L23/528 ,  H01L23/522

Abstract: Disclosed is a semiconductor device including a first active pattern and a second active pattern that extend in a first direction on a substrate and are spaced apart from each other in a second direction crossing the first direction, a first gate structure that extends across the first and second active patterns, a second gate structure that is spaced apart from the first gate structure, and a node contact between the first and second gate structures that electrically connects the first active pattern and the second active pattern to each other. The node contact comprises a first end adjacent to the first active pattern and a second end adjacent to the second active pattern. The second end of the node contact being shifted in the first direction relative to the first end of the node contact so as to be closer to the second gate structure than to the first gate structure.

公开(公告)号：US10910387B2

公开(公告)日：2021-02-02

申请号：US16374363

申请日：2019-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyoung Kim ,  Hyung Jong Lee ,  Deokhan Bae

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

Abstract: Disclosed is a semiconductor device including a first active pattern and a second active pattern that extend in a first direction on a substrate and are spaced apart from each other in a second direction crossing the first direction, a first gate structure that extends across the first and second active patterns, a second gate structure that is spaced apart from the first gate structure, and a node contact between the first and second gate structures that electrically connects the first active pattern and the second active pattern to each other. The node contact comprises a first end adjacent to the first active pattern and a second end adjacent to the second active pattern. The second end of the node contact being shifted in the first direction relative to the first end of the node contact so as to be closer to the second gate structure than to the first gate structure.