公开(公告)号：US12272709B2

公开(公告)日：2025-04-08

申请号：US17655576

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho Jang ,  Jeongsoon Kang ,  Donghyun Kim ,  Seungkuk Kang ,  Insung Joe

IPC: H01L27/146

Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

公开(公告)号：US20230142858A1

公开(公告)日：2023-05-11

申请号：US17814085

申请日：2022-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho JANG ,  Seungkuk Kang ,  Kwangmin Lee ,  Insung Joe

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/369

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/307 ,  H01L27/14603 ,  H04N5/3698

Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion elements and a variable filter layer disposed on the substrate. The variable filter layer includes a plurality of first electrodes extending in a first direction, and having a first width in a second direction, a first electro-optical material layer disposed on the plurality of first electrodes, a light-transmitting electrode disposed on the first electro-optical material layer, a second electro-optical material layer disposed on the light-transmitting electrode, and a plurality of second electrodes disposed on the second electro-optical material layer, extending in the second direction, and having a second width in the first direction.

公开(公告)号：US20230081238A1

公开(公告)日：2023-03-16

申请号：US17901335

申请日：2022-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minho Jang ,  Seungkuk Kang

IPC: H01L27/146 ,  H01L23/00

Abstract: An image sensor includes a stack structure including an active pixel region in which a plurality of pixels are defined, and a pad region arranged on at least one side of the active pixel region. The stack structure includes a first substrate including a photoelectric conversion region and a floating diffusion region in each pixel, a first semiconductor substrate, a first front structure on the first semiconductor substrate, and a pad opening penetrating the first semiconductor substrate in the pad region, a second substrate attached to the first substrate and including a pixel gate electrically connected to the floating diffusion region in each pixel, a third substrate attached to the second substrate and including a logic transistor for driving the plurality of pixels, and a pad having a top surface that is exposed through the pad opening.

公开(公告)号：US12266674B2

公开(公告)日：2025-04-01

申请号：US17315321

申请日：2021-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho Jang ,  Kyoungwon Na ,  Seungkuk Kang ,  Hyunchul Kim ,  Hyun Young Yeo ,  In Sung Joe

IPC: H01L27/146

Abstract: An image sensor includes a first chip that includes a pixel region and a pad region, and a second chip that is in contact with one surface of the first chip and includes circuits that drive the first chip. The first chip includes a first substrate, an interlayer insulating layer disposed between the first substrate and the second chip, first interconnection lines disposed in the interlayer insulating layer, a conductive pad disposed in the pad region between the second chip and the first interconnection lines, and a recess region formed in the pad region that penetrates the first substrate and the interlayer insulating layer and exposes the conductive pad.

公开(公告)号：US20230030489A1

公开(公告)日：2023-02-02

申请号：US17655576

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINHO JANG ,  Jeongsoon Kang ,  Donghyun Kim ,  Seungkuk Kang ,  Insung Joe

IPC: H01L27/146

Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.