公开(公告)号：US20210242271A1

公开(公告)日：2021-08-05

申请号：US17097329

申请日：2020-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae PARK ,  Yong Wan JIN ,  Sun Young YUN ,  Sung Jun PARK ,  Feifei FANG ,  Chul Joon HEO

IPC: H01L27/146 ,  H01L31/0352

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.