公开(公告)号：US20240173710A1

公开(公告)日：2024-05-30

申请号：US18319760

申请日：2023-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Keun KUK ,  Hyun Chul LEE ,  Sang Min JI ,  Sungwoo KANG ,  Dong Sik YANG

IPC: B01J35/00 ,  A61L9/20 ,  B01J35/02

CPC classification number: B01J35/004 ,  A61L9/205 ,  B01J35/0013 ,  B01J35/023 ,  A61L2101/02

Abstract: A p-n heterojunction photocatalyst, an air purifier including the p-n heterojunction photocatalyst, and a method of preparing the p-n heterojunction photocatalyst. The p-n heterojunction photocatalyst includes a granule type composite which includes: first compound particles; and second compound particles on at least a portion of surfaces of the first compound particles, wherein the composite has a size of about 0.9 μm to about 5 μm based on a major axis, a standard deviation of the size is about ±0.9 μm or less, and upon exposure to energy irradiation, the composite generates a reactive oxygen species of singlet oxygen (1O2) to induce photolysis of gaseous pollutants.

公开(公告)号：US20210217749A1

公开(公告)日：2021-07-15

申请号：US16888209

申请日：2020-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun LEE ,  Sungwoo KANG ,  Jongchul PARK ,  Youngmook OH ,  Jeongyun LEE

IPC: H01L27/088 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active pattern and extending in a second direction different from the first direction, a plurality of inter-contact insulation patterns on respective ones of the plurality of gate structures, a plurality of interlayer insulation layers on side surfaces of the plurality of gate structures, and a plurality of contact plugs respectively between pairs of the plurality of gate structures. The fin type active pattern may include a plurality of source/drains. Lower ends of the plurality of contact plugs may contact the plurality of source/drains. The plurality of gate structures may each include a first gate metal, a second gate metal, a gate capping layer, a gate insulation layer, a first spacer, and a second spacer.